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研磨用膠帶

研磨用膠帶

在背面研磨過程中用于保護半導體晶圓的膠帶。用紫外線加熱或剝離的方法卸除膠帶。

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背面研磨膠帶介紹

Backside Grinding Tape is used to protect the wafer surface during wafer back grinding after the device is formed on the wafer and the wafer passes tests.

背面研磨膠帶用于在晶圓上形成器件且晶圓通過測試后,在晶圓背面研磨期間保護晶圓表面。

Back grinding occur only on the back side of the wafer, during this process chemically contaminated parts of the wafer removed and thickness of the chip reduced. 

The thickness of the wafer defines the size of the finial package, which in turn, is useful to reduce resistance of the chip and power consumption.

背面研磨僅發(fā)生在晶圓的背面,在此過程中,晶圓的化學污染部分被去除,芯片的厚度減小。晶圓的厚度決定了最終封裝的尺寸,這反過來又有助于降低芯片的電阻和功耗。

Back grinding tapes, attached on the circuit surface, wafer front side. It prevents damages to the circuit and pollutions to the wafer surface and improves the grinding accuracy of the wafer. 

Especially,it can perfectly protect the wafer pattern surface and the chip during the manufacturing process with its excellent physical and chemical properties。

On the other hand, thin wafers can be easily band or get broken, which makes their handling very difficult。

背面研磨膠帶,貼在電路表面,晶圓正面。防止電路損壞和晶片表面污染,提高晶片的研磨精度。尤其是其優(yōu)異的物理化學性能,可以在制造過程中完美保護晶圓圖案表面和芯片。另一方面,薄晶圓很容易彎曲或斷裂,這使得它們的處理非常困難。


Back grinding process

背面研磨過程

It is typically divided in 3 steps, taping, grinding and tape removing.

1)Tape mounting to the front side of the wafer. During this step it is necessary that there is no bubbles or air traps.

2)Back grinding process. Can be performed in 3 steps, coarse, fine grinding, and Chemical Mechanical Planarization (CMP) or supper fine grinding.

3)The last process is the tape peeling, wherein BG tape is removed from the wafer front side.

Typically, UV and non-UV tape removing. After peeing of the tape there should be no residue left on the wafer.

它通常分為3個步驟,膠帶、研磨和膠帶去除。

1)膠帶安裝到晶圓的正面。在此步驟中,必須沒有氣泡或空氣陷阱。
2)背面研磨工藝。可分3個步驟進行,粗磨、精磨和化學機械平面化(CMP)或超細磨。
3)最后一道工序是膠帶剝離,從晶圓正面去除研磨膠帶。通常,有兩種方法去除膠帶UV和非UV。剝離膠帶后,晶片上不應(yīng)該有殘留物。


Tape structure

膠帶結(jié)構(gòu)

Tape is usually 3 layers, but some tapes have more layers depending on surface construction of wafer/substrate and process requirements.

膠帶通常為3層,但根據(jù)晶圓/基板的表面結(jié)構(gòu)和工藝要求,有些膠帶的層數(shù)更多。


所需功能

結(jié)構(gòu) 

功能

目的

基膜載體

 

墊子

防止研磨影響

 

準確的厚度

研磨后晶圓厚度均勻

 

無缺陷(ex. fisheye)

防止損壞晶圓

粘合劑

 

低污染

低從粘合劑轉(zhuǎn)移

 

輕度剝離

容易從易碎的晶圓上剝離

 

準確的厚度

研磨后晶圓厚度均勻

襯墊

 

保護粘合劑

保持粘合劑清潔。 防止灰塵或污染

 

粘合劑平整度

粘合劑面平整度 


Tape types

膠帶類型

There is major two classification of Back Grinding Tapes, UV Type, Non-UV Type.
To Non-UV belongs wafer that can be directly peeled off, or adhesive strength can be reduced at elevated temperatures and then peeled off.
UV tapes adhesive strength is drastically reduced after ultraviolet irradiation, then tape can be easily peeled off. There is no or minimum adhesive residue left on the wafer surface, there is no cleaning step is necessary after application of UV tapes. Higher initial adhesive strength prevents forming of the bubbles, and low adhesive strength after UV irradiation will not induce high stresses on the wafer, this is necessary。

背面研磨膠帶主要分為兩大類,UV型,非UV型。
非UV屬于可以直接剝離的膠帶,或者可以在高溫下降低粘合強度然后剝離。
紫外線照射后UV膠帶的粘合力急劇下降,膠帶很容易剝落。晶圓表面沒有粘合劑殘留或有最少的粘合劑殘留,在使用UV膠帶后無需進行清潔步驟。較高的初始粘合強度可防止氣泡的形成,UV照射后的低粘合強度不會在晶片上產(chǎn)生高應(yīng)力,這是很重要的。

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