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| Czochralski | Float Zone | Float Zone |
| Diameter | 100-150 mm | 50-150 mm* | 100-150 mm* |
| Crystal orientation | <100> <111> | <100> <111> | <100> <111> |
| Orientation accuracy | <0.5° | <0.5° | <0.5° |
| Type and dopant | Undoped, n-type, | Undoped, n-type, | Undoped, n-type, |
| Dopant | As, B, P, and Sb | P, B | P, B |
| Bulk resistivity | 0.001-60 | 1-30,000 | 1-30,000 |
| Bulk lifetime | >20 μs | >1,000 μs | >1,000 μs |
| Wafer thickness | 200-1,500 μm | 200-1,500 μm | 200-1,500 μm |
| Wafer thickness | ±15 μm | ±15 μm | ±5 μm |
| TTV | <5 μm or <9 μm | <5 μm or <9 μm | <2.5 μm |
| TIR | <3 μm | <3 μm | <1 μm |
| Wafer surface finish | Single side polished, | Single side | Double side |
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